BDY24 transistor equivalent, silicon npn power transistor.
*Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UN.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operatio.
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